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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 1/4 HSB857J PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings (TA=25C) TO-252 * Maximum Temperatures Storage Temperature ............................................................................................................................. -50~+150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25C) ..................................................................................................................... 20 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage......................................................................................................................... -60 V BVCEO Collector to Emitter Voltage..................................................................................................................... -50 V BVEBO Emitter to Base Voltage............................................................................................................................. -5 V IC Collector Current .............................................................................................................................................. -3 A IC Collector Current (IC Peak)............................................................................................................................ -4.5 A Electrical Characteristics (TA=25C) Symbol BVCBO BVCEO BVEBO ICBO ICEO IEBO *VCE(sat) *VBE(sat) *hFE fT Min. -60 -50 -5 170 Typ. -0.3 15 Max. -1 -1 -1 -1 -1.5 400 MHz Unit V V V uA uA uA V V IC=-50uA IC=-1mA IE=-50uA VCB=-50V VCE=-40V VEB=-4V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-500mA, VCE=-3V VCE=-5V, IC=-500mA, f=100MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% Test Conditions HSB857J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 2/4 Saturation Voltage & Collector Current hFE @ VCE=4V Saturation Volltage (mV) VBE(sat) @ IC=10IB 1000 hFE @ VCE=3V hFE 100 100 VCE(sat) @ IC=10IB 10 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current-IC (mA) Collector Current-IC (mA) Cutoff Frequency & Collector Current 1000 1000 Capacitance & Reverse-Biased Voltage Cutoff Frequency (MHZ) Capacitance (pF) fT @ VCE=5V 100 Cob 100 1 10 100 10 1 10 100 Collector Current-IC (mA) Reverse Biased Voltage (V) Safe Operating Area 10 Collector Current (A) 1 PT=1ms PT=100ms PT=1s 0.1 1 10 100 1000 Forward Voltage-VCE (V) HSB857J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-252 Dimension M A F C G 1 2 3 Date Code Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 3/4 Marking: a1 Pb Free Mark Pb-Free: " . " (Note) H Normal: None J SB8 5 7 Control Code Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter N H a5 L a2 Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A C F G H L M N a1 a2 a5 Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65 Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05 *: Typical, Unit: mm a1 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J A B C D a1 E Marking: M F y1 a1 Pb-Free: " . " (Note) H Normal: None Pb Free Mark J SB8 5 7 Date Code Control Code GI y1 y1 Note: Green label is used for pb-free packing Pin Style: 1.Base 2.Collector 3.Emitter Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 J K a2 y2 H N L a2 y2 3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J a1 O DIM A B C D E F G H I J K L M N O a1 a2 y1 y2 Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 - Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o *: Typical, Unit: mm Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB857J HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HJ200101 Issued Date : 2001.09.01 Revised Date : 2005.07.14 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o HSB857J HSMC Product Specification |
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